IXFL70N60Q2 HiPerFET Power MOSFET Q2-Class

IXYS Corporation

Description

HiPerFETTM Power MOSFET Q2-Class (Electrically Isolated Tab) IXFL70N60Q2 VDSS = ID25 = RDS(on) ≤ ≤ trr 600V 37A 92mΩ 250ns N-Channel Enhancement M.

📥 Download Datasheet

IXFL70N60Q2 Datasheet Preview — Preview of IXFL70N60Q2 PDF

Datasheet Specifications

Part number: IXFL70N60Q2
Manufacturer: IXYS Corporation
File Size: 154.90 KB
Datasheet: IXFL70N60Q2_IXYSCorporation.pdf
Description: HiPerFET Power MOSFET Q2-Class

Features

* z G D S ISOLATED TAB G = Gate S = Source D = Drain z z z z z z 1.6 mm (0.063 in. ) from Case for 10s Plastic body for 10s Mounting Force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 260 40..120 / 9..27 2500 3000 8 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2

Applications

* Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±30 V, VDS = 0V VDS = VDSS, VGS = 0V VGS = 10V, ID = 35A, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 ± 200 V V nA z z z z z DC-DC Con

IXFL70N60Q2 Distributors

📁 Related Datasheet

IXFL38N100Q2 IXFL44N100P IXF18102 IXF18104 IXFA102N15T IXFA110N15T2

📌 All Tags

IXFL70N60Q2 HiPerFET Power MOSFET Q2-Class IXYS Corporation

IXYS Corporation IXFL70N60Q2-like datasheet