IXFL70N60Q2 Datasheet - IXYS Corporation

IXFL70N60Q2 HiPerFET Power MOSFET Q2-Class

HiPerFETTM Power MOSFET Q2-Class (Electrically Isolated Tab) IXFL70N60Q2 VDSS = ID25 = RDS(on) ≤ ≤ trr 600V 37A 92mΩ 250ns N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic RG High dV/dt, Low trr ISOPLUS264 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD FC VISOL www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD .

IXFL70N60Q2 Features

* z G D S ISOLATED TAB G = Gate S = Source D = Drain z z z z z z 1.6 mm (0.063 in.) from Case for 10s Plastic body for 10s Mounting Force 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 260 40..120 / 9..27 2500 3000 8 Silicon Chip on Direct-Copper Bond (DCB) Substrate Isolated Mounting Surface 2

IXFL70N60Q2_IXYSCorporation.pdf