* z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International st
IXFN102N30P Datasheet (140.00 KB)
IXFN102N30P
IXYS Corporation
140.00 KB
Polar mosfets.
Advanced Technical Information www.DataSheet4U.com PolarHTTM HiPerFET IXFK 102N30P IXFN 102N30P Power MOSFET N-Channel Enhancement Mode Fast Intrinsi.
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