IXFN102N30P, IXFK102N30P - Polar MOSFETs

IXYS Corporation

Datasheet Details

Part number	IXFN102N30P, IXFK102N30P
Manufacturer	IXYS Corporation
File Size	140.00 KB
Description	Polar MOSFETs
Datasheet	IXFK102N30P_IXYSCorporation.pdf
Note	This datasheet PDF includes multiple part numbers: IXFN102N30P, IXFK102N30P. Please refer to the document for exact specifications by model.

z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA VDS = VGS, ID = 4 mA VGS = ±20 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125°C Characteristic Values Min. Typ. Max. 300 2.5 5.0 ±200 25 250 33 V V nA µA µA mΩ z z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages z z z VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %.

📁 IXFN102N30P Similar Datasheet

Other Datasheets by IXYS Corporation

Published: Jan 23, 2009 |