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IXFN106N20, IXFN100N20 HiPerFET Power MOSFETs

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Description

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 2.

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This datasheet PDF includes multiple part numbers: IXFN106N20, IXFN100N20. Please refer to the document for exact specifications by model.
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Datasheet Specifications

Part number
IXFN106N20, IXFN100N20
Manufacturer
IXYS Corporation
File Size
135.56 KB
Datasheet
IXFN100N20_IXYSCorporation.pdf
Description
HiPerFET Power MOSFETs
Note
This datasheet PDF includes multiple part numbers: IXFN106N20, IXFN100N20.
Please refer to the document for exact specifications by model.

Features

* International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier l

Applications

* DC-DC converters Synchronous rectification Battery chargers Switched-mode and resonant-mode power supplies DC choppers Temperature and lighting controls Low voltage relays q q q q q q q Advantages Easy to mount Space savings High power density q q q IXYS reserves the right to change limits, test c

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