IXFN106N20, IXFN100N20 Datasheet - IXYS Corporation

IXFN106N20 HiPerFET Power MOSFETs

www.DataSheet4U.com HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Symbol Test Conditions VDSS IXFK 90 N 20 IXFN 100 N 20 IXFN 106 N 20 ID25 RDS(on) 23 mW 23 mW 20 mW 200 V 90 A 200 V 100 A 200 V 106 A trr £ 200 ns TO-264 AA TO-264 AA (IXFK) Maximum Ratings IXFK IXFN IXFN 90N20 100N20 106N20 200 200 200 V 200 ±20 ±30 90 76 360 50 30 5 500 200 ±20 ±30 100 400 50 30 5 520 150 -55 +150 200 V 20 V 20 V 106 A A 424 A A 30 mJ 5 V/ns W °C °C °C °C V~ V.

IXFN106N20 Features

* International standard packages JEDEC TO-264 AA, epoxy meet UL 94 V-0, flammability classification miniBLOC with Aluminium nitride isolation Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance Fast intrinsic Rectifier l

IXFN100N20_IXYSCorporation.pdf