IXFN110N60P3 Datasheet - IXYS Corporation

IXFN110N60P3 Polar3 HiPerFET Power MOSFET

Advance Technical Information Polar3TM HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier IXFN110N60P3 VDSS ID25 RDS(on) trr = = ≤ ≤ 600V 90A 56mΩ 250ns miniBLOC E153432 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg VISOL Md Weight www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ .

IXFN110N60P3 Features

* z z S G S D G = Gate S = Source D = Drain Either Source Terminal S can be used as the Source Terminal or the Kelvin Source (Gate Return) Terminal. 50/60 Hz, RMS, t = 1minute IISOL ≤ 1mA, t = 1s Mounting Torque for Base Plate Terminal Connection Torque 2500 3000 1.5/13 1.3/11.5 30 z z z z In

IXFN110N60P3_IXYSCorporation.pdf