IXFN160N30T Datasheet - IXYS Corporation

IXFN160N30T GigaMOS Power MOSFET

Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN160N30T RDS(on) ≤ ≤ trr VDSS ID25 = = 300V 130A 19mΩ 200ns miniBLOC, SOT-227 E153432 S Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD VISOL Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C TC = 25°C Max.

IXFN160N30T Features

* z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA www.DataSheet4U.net 300 260 2500 3000 1.5/13 1.3/11.5 30 t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque International Standard Package miniBLOC, with Aluminium Nitride Isolation z Isolat

IXFN160N30T_IXYSCorporation.pdf