IXFN160N30T GigaMOS Power MOSFET

IXYS Corporation

Description

Advance Technical Information GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFN160N30T RDS(on) ≤ ≤ trr V.

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Datasheet Specifications

Part number: IXFN160N30T
Manufacturer: IXYS Corporation
File Size: 162.52 KB
Datasheet: IXFN160N30T_IXYSCorporation.pdf
Description: GigaMOS Power MOSFET

Features

* z z 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10s 50/60 Hz, RMS IISOL ≤ 1mA www. DataSheet4U. net 300 260 2500 3000 1.5/13 1.3/11.5 30 t = 1 minute t = 1 second Mounting Torque Terminal Connection Torque International Standard Package miniBLOC, with Aluminium Nitride Isolation z Isolat

Applications

* z z z 50 µA 3 mA 19 mΩ z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications DS100128(03/09) © 2009 IXYS CORPORATION, All Rights Reserved IXFN160N30T Symbol Test

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IXFN160N30T GigaMOS Power MOSFET IXYS Corporation

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