IXFN27N80 Datasheet - IXYS Corporation

IXFN27N80 (IXFx2xN80) HiPerFET Power MOSFETs

www.DataSheet4U.com Not for New Designs VDSS ID25 27 A 25 A 27 A 25 A RDS(on) 0.30 0.35 0.30 0.35 Ω Ω Ω Ω HiPerFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr IXFK IXFK IXFN IXFN 27N80 25N80 27N80 25N80 800 800 800 800 V V V V TO-264 AA (IXFK) Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL VISOL Md Weight Symbol Test Conditions 1.6 mm (0.063 in) from case for 10 s 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s 300 0.9/6 10 TC= 25°C IS≤ ID.

IXFN27N80 Features

* G D S (TAB) miniBLOC, SOT-227 B (IXFN) E153432 D G S G S S S D G = Gate S = Source D = Drain TAB = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source -55 +150 Mounting torque Terminal connection torque

IXFN27N80 Datasheet (296.83 KB)