IXFN27N80Q Datasheet - IXYS Corporation

IXFN27N80Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM IXFN 27N8.

IXFN27N80Q Features

* International standard package

* Epoxy meet

* miniBLOC with Aluminium nitride isolation UL 94 V-0, flammability classification Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g

* IXYS advanced low Qg process

* Rugged polys

IXFN27N80Q_IXYSCorporation.pdf

IXFN27N80Q Datasheet Preview — Preview of IXFN27N80Q PDF

Datasheet Details

Part number:

IXFN27N80Q

Manufacturer:

IXYS Corporation

File Size:

108.44 KB

Description:

Power mosfet.

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IXFN27N80Q IXFN27N80Q Power MOSFET IXYS Corporation

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