IXFN27N80Q - Power MOSFET
HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL ≤ 1 mA t = 1 min t=1s TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM IXFN 27N8
IXFN27N80Q Features
* International standard package
* Epoxy meet
* miniBLOC with Aluminium nitride isolation UL 94 V-0, flammability classification Mounting torque Terminal connection torque 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g
* IXYS advanced low Qg process
* Rugged polys
