IXFN27N80Q Datasheet - IXYS Corporation

IXFN27N80Q, Power MOSFET

HiPerFETTM Power MOSFETs Q-Class Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary data sheet Symbol VDSS .

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IXFN27N80Q_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN27N80Q

Manufacturer:

IXYS Corporation

File Size:

108.44 KB

Description:

Power MOSFET

Features

* International standard package
* Epoxy meet
* miniBLOC with Aluminium nitride isolation UL 94 V-0, flammability classification Mounting torque Terminal connection torque 1.5/13 Nm/lb. in. 1.5/13 Nm/lb. in. 30 g
* IXYS advanced low Qg process
* Rugged polys

Applications

* rated Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 800 2.5 TJ = 25°C TJ = 125°C 4.5 ±100 100 2 0.32 V V nA µA mA Ω VDSS VGH(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 µA V DS = VGS, ID = 4 mA V GS = ±20 VDC, VDS = 0 V DS = VDSS V GS = 0 V V

IXFN27N80Q Distributors

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IXFN27N80Q Power MOSFET IXYS Corporation

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