IXFN70N60Q2 Datasheet - IXYS Corporation

IXFN70N60Q2, Power MOSFET

HiPerFETTM Power MOSFET Q2-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM I.

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IXFN70N60Q2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN70N60Q2

Manufacturer:

IXYS Corporation

File Size:

129.94 KB

Description:

Power MOSFET

Features

* z S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source z z z z Mounting Torque Terminal Connection Torque Double Metal Process for Low Gate Resistance miniBLOC, with Aluminium Nitride Isolation Avalanche Rated Low Package Inductance F

Applications

* z z z z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 1mA VDS = VGS, ID = 8mA VGS = ±30V, VDS = 0V VDS = VDSS, VGS = 0V TJ = 125°C Characteristic Values Min. Typ. Max. 600 3.0 5.5 ±200 50 3 88 V V nA μA mA mΩ DC-DC Converters Switch

IXFN70N60Q2 Distributors

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IXFN70N60Q2 Power MOSFET IXYS Corporation

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