IXFN70N60Q2 Datasheet - IXYS Corporation

IXFN70N60Q2 Power MOSFET

HiPerFETTM Power MOSFET Q2-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dV/dt PD TJ TJM Tstg TL VISOL Md Weight www.DataSheet4U.net IXFN70N60Q2 VDSS = 600V ID25 = 70A RDS(on) ≤ 88mΩ ≤ 250ns trr miniBLOC, SOT-227 B E153432 Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 1.

IXFN70N60Q2 Features

* z S G S D G = Gate S = Source D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source z z z z Mounting Torque Terminal Connection Torque Double Metal Process for Low Gate Resistance miniBLOC, with Aluminium Nitride Isolation Avalanche Rated Low Package Inductance F

IXFN70N60Q2_IXYSCorporation.pdf