HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 A 75 A RDS(on) 50 mΩ 55 mΩ 500 V 500 V S Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight Symbol Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C, Chip capability TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ IDM, di/dt ≤ 100 A/µs, VDD
Datasheet Details
Part number:
IXFN75N50, IXFN80N50
Manufacturer:
IXYS Corporation
File Size:
126.82 KB
Description:
(ixfn80n50 / ixfn75n50) hiperfet power mosfets single die mosfet.
Note:
This datasheet PDF includes multiple part numbers: IXFN75N50, IXFN80N50.
Please refer to the document for exact specifications by model.