Description
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr VDSS IXFN 80N50 IXFN 75N50 D G S ID25 80 .
Features
* International standard packages
* miniBLOC, with Aluminium nitride
isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS)
rated
50/60 Hz, RMS IISOL ≤ 1 mA
t = 1 min t=1s
2500 3000
Mountin
Applications
* DC-DC converters
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 TJ = 25°C TJ = 125°C 80N50 75N50 4 ± 200 100 2 50 55 V V nA µA mA mΩ mΩ
* Battery chargers Switched-mode and resonant-mode power sup