IXFN72N55Q2 Datasheet - IXYS Corporation

IXFN72N55Q2 Power MOSFET

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet IXFN 72N55Q2 VDSS = 550 V ID25 = 72 A RDS(on)= 72 mΩ ≤ 250 ns trr miniBLOC, SOT-227 B (IXFN) E153432 Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg www.DataSheet4U.net Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS ≤ I.

IXFN72N55Q2 Features

* Double metal process for low gate resistance

* miniBLOC, with Aluminium nitride isolation

* Unclamped Inductive Switching (UIS) rated

* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VI

IXFN72N55Q2_IXYSCorporation.pdf