IXFN72N55Q2 Datasheet - IXYS Corporation

IXFN72N55Q2, Power MOSFET

HiPerFETTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated, Low Qg, Low Intrinsic Rg High dV/dt, Low trr Preliminary Data Sheet IXFN 72N55Q2 .

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IXFN72N55Q2_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN72N55Q2

Manufacturer:

IXYS Corporation

File Size:

581.04 KB

Description:

Power MOSFET

Features

* Double metal process for low gate resistance
* miniBLOC, with Aluminium nitride isolation
* Unclamped Inductive Switching (UIS) rated
* Low package inductance G = Gate S = Source S D D = Drain Either Source terminal at miniBLOC can be used as Main or Kelvin Source VI

Applications

* DC-DC converters Weight Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 550 2.5 5.0 V V
* Switched-mode power supplies
* DC choppers and resonant-mode VDSS V GS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS,

IXFN72N55Q2 Distributors

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IXFN72N55Q2 Power MOSFET IXYS Corporation

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