IXFN73N30Q Datasheet - IXYS Corporation

IXFN73N30Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg VISOL Md Weight 50/60 Hz, RMS IISOL≤ 1 mA t = 1 min t=1s IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 2 Ω TC = 25°C Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IXFN 73N30Q VDSS ID25 RDS(on.

IXFN73N30Q Features

* IXYS advanced low Qg process

* Low gate charge and capacitances - easier to drive -faster switching

* Unclamped Inductive Switching (UIS) rated

* Low RDS (on)

* Fast intrinsic diode

* International standard package

* miniBLOC with Aluminium n

IXFN73N30Q_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXFN73N30Q

Manufacturer:

IXYS Corporation

File Size:

98.75 KB

Description:

Power mosfet.

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IXFN73N30Q IXFN73N30Q Power MOSFET IXYS Corporation

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