IXGH48N60C3D1 Datasheet - IXYS Corporation

IXGH48N60C3D1, GenX3 600V IGBT

www.DataSheet.co.kr GenX3TM 600V IGBT with Diode High speed PT IGBT for 40-100kHz Switching IXGH48N60C3D1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 60.

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Datasheet Details

Part number:

IXGH48N60C3D1

Manufacturer:

IXYS Corporation

File Size:

262.65 KB

Description:

GenX3 600V IGBT

Features

* z z z z z z G C E ( TAB ) G = Gate E = Emitter C = Collector TAB = Collector Optimized for Low Switching Losses Square RBSOA Anti-Parallel Ultra Fast Diode Fast Switching Avalanche Rated International Standard Package Advantages z z High Power Density Low Gate Drive Requirement Applicati

Applications

* z Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C Characteristic Values Min. Typ. Max. 3.0 5.5 V 300 μA 1.75 mA ±100 2.3 1.8 2.5 nA V V z z z

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IXGH48N60C3D1 GenX3 600V IGBT IXYS Corporation

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