z z z z z z
G
C
E C
( TAB )
G = Gate E = Emitter
= Collector
TAB = Collector
Optimized for Low Switching Losses Square RBSOA Anti-Parallel Schottky Diode Fast Switching Avalanche Rated International Standard Package
Advantages
z z
High Power Density Low Gate Drive Requirement
Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) VGE(th) ICES IGES VCE(sat) IC = 250μA, VCE = VGE TJ = 125°C VCE = VCES, VGE = 0V VCE = 0V, VGE = ±20V IC = 30A, VGE = 15V, Note 1 TJ = 125°C
Charact.
