IXGH48N60B3C1 Datasheet - IXYS

IXGH48N60B3C1 GenX3 600V IGBT

Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGH48N60B3C1 VCES IC110 VCE(sat) tfi(typ) = = ≤ = 600V 48A 1.8V 116ns Medium Speed Low Vsat PT IGBT 5 - 40 kHz Switching TO-247 Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ =.

IXGH48N60B3C1 Features

* z G C ( TAB ) E C = Collector TAB = Collector G = Gate E = Emitter z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10

IXGH48N60B3C1_IXYS.pdf