IXGH48N60B3C1 GenX3 600V IGBT

IXYS

Description

Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode IXGH48N60B3C1 VCES IC110 VCE(sat) tfi(typ) = =.

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Datasheet Specifications

Part number: IXGH48N60B3C1
Manufacturer: IXYS
File Size: 211.69 KB
Datasheet: IXGH48N60B3C1_IXYS.pdf
Description: GenX3 600V IGBT

Features

* z G C ( TAB ) E C = Collector TAB = Collector G = Gate E = Emitter z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package 1.6mm (0.062 in. ) from Case for 10s Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10

Applications

* Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVCES VGE(th) ICES IGES VCE(sat) IC = 250μA, VGE = 0V IC = 250μA, VCE = VGE VCE = VCES, VGE = 0V TJ = 125°C VCE = 0V, VGE = ± 20V IC = 32A, VGE = 15V, Note 1 Characteristic Values Min. Typ. Max. 600 3.0 5.0 V V z z z z z z z z 50 μ A 1.7

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IXGH48N60B3C1 GenX3 600V IGBT IXYS

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