IXGH48N60A3D1 Datasheet - IXYS

IXGH48N60A3D1 Ultra Low Vsat PT IGBT

GenX3TM 600V IGBT w/Diode Ultra Low Vsat PT IGBT for up to 5kHz switching IXGH48N60A3D1 VCES = IC110 = VCE(sat) ≤ 600V 48A 1.35V TO-247 AD Symbol Test Conditions VCES VCGR VGES VGEM TC = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient IC110 ICM SSOA (RBSOA) TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load PC TJ TJM Tstg TL TSOLD Md Weight TC = 25°C 1.6mm (0.062in.) from case for 10s Plastic body for 10 seconds Mounting torque Maximum R.

IXGH48N60A3D1 Features

* z Optimized for Low Conduction Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z High Current Handling Capability z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery C

IXGH48N60A3D1-IXYS.pdf