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IXKR40N60C CoolMOS Power MOSFET

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Description

www.DataSheet4U.com Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSF.

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Datasheet Specifications

Part number
IXKR40N60C
Manufacturer
IXYS Corporation
File Size
75.25 KB
Datasheet
IXKR40N60C_IXYSCorporation.pdf
Description
CoolMOS Power MOSFET

Features

* J mJ q Symbol Conditions Characteristic Values (TVJ = 25°C, unless otherwise specified) min. typ. max. 70 mΩ 3.5 60 5.5 V q ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High te

Applications

* q q q q q VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 Ω (reverse conduction) IF = 20 A; VGS = 0 V Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 0.45 K/W CoolMOS is a trademark of Infineon Technologies AG. IXYS re

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