IXSH30N60B Datasheet - IXYS Corporation

IXSH30N60B High Speed IGBT

High Speed IGBT IXSH/IXST 30N60B IXSH/IXST 30N60C Short Circuit SOA Capability VCES ICES tfi 600 V 2.0 V 140 ns 600 V 2.5 V 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 2.7 Ω Clamped inductive load, VCC= 0.8 VCES VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 33 Ω, non repetitive TC = 25°C Maxi.

IXSH30N60B Features

* l l Mounting torque (TO-247) TO-247 TO-268 1.13/10 Nm/lb.in. 6 4 300 g g °C l l International standard packages Short Circuit SOA capability High frequency IGBT New generation HDMOSTM process Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Applications l Symbol

IXSH30N60B Datasheet (131.51 KB)