IXSH30N60CD1, IXSK30N60CD1 Datasheet - IXYS Corporation

IXSH30N60CD1 - Short Circuit SOA Capability

High Speed IGBT with Diode IXSH 30 N60CD1 IXSK 30 N60CD1 IXST 30 N60CD1 Short Circuit SOA Capability Preliminary data VCES IC25 VCE(sat) t fi TO-247AD (IXSH) = = = = 600 V 55 A 2.5 V 70 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10 W Clamped inductive load, VCL = 0.8 VCES VGE = 15 V, VCE =

IXSH30N60CD1 Features

* International standard packages: JEDEC TO-247, TO-264& TO-268

* Short Circuit SOA capability

* High freqeuncy IGBT and antiparallel FRED in one package

* New generation HDMOSTM process Applications Mounting torque 1.13/10 Nm/lb.in. 6 300 g °C Maximum lead tempera

IXSK30N60CD1_IXYSCorporation.pdf