* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching speeds up to 20 kHz A
IXSH30N60B2D1 Datasheet (637.05 KB)
IXSH30N60B2D1
IXYS
637.05 KB
High speed igbt with diode.
www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25.
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