IXSH30N60B2D1, IXST30N60B2D1 Datasheet - IXYS

IXSH30N60B2D1 High Speed IGBT with Diode

www.DataSheet4U.com High Speed IGBT with Diode Short Circuit SOA Capability Preliminary Data Sheet IXSH 30N60B2D1 IXST 30N60B2D1 VCES = 600 V I C25 = 48 A V CE(sat) = 2.5 V Symbol VCES VCGR VGES VGEM IC25 IC110 IF(110) ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 10Ω Clamped inductive load VGE = 15 V, VCE = 360 V, TJ = 125°C RG = 10 Ω.

IXSH30N60B2D1 Features

* International standard package

* Guaranteed Short Circuit SOA capability

* Low VCE(sat) - for low on-state conduction losses

* High current handling capability

* MOS Gate turn-on - drive simplicity

* Fast fall time for switching speeds up to 20 kHz A

IXST30N60B2D1_IXYS.pdf

IXSH30N60B2D1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXSH30N60B2D1, IXST30N60B2D1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXSH30N60B2D1, IXST30N60B2D1

Manufacturer:

IXYS

File Size:

637.05 KB

Description:

High speed igbt with diode.

Note:

This datasheet PDF includes multiple part numbers: IXSH30N60B2D1, IXST30N60B2D1.
Please refer to the document for exact specifications by model.

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IXSH30N60B2D1 IXST30N60B2D1 High Speed IGBT with Diode IXYS

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