* International standard package
* Guaranteed Short Circuit SOA capability
* Low VCE(sat) - for low on-state conduction losses
* High current handling capability
* MOS Gate turn-on - drive simplicity
* Fast fall time for switching speeds up to 20 kHz A
IXSH30N60B2D1 Datasheet (637.05 KB)
IXSH30N60B2D1
IXYS
637.05 KB
High speed igbt with diode.
www.DataSheet4U.com
High Speed IGBT with Diode
Short Circuit SOA Capability
Preliminary Data Sheet
IXSH 30N60B2D1 IXST 30N60B2D1
VCES = 600 V I C25.
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