IXSH35N120B Datasheet - IXYS Corporation

IXSH35N120B IGBT

IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC PC TJ TJM Tstg Md Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TJ = 125°C, RG = 5 Ω Clamped inductive load Maximum Ratings 1200 1200 ± 20 ± 30 70 35 140 ICM = 90 @ 0.8 VCES 10 300 -55 +150 150 -55 +150 V V V V A A A A µs W °C °C °C.

IXSH35N120B Features

* l Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity 6 4 Applications Symbol Test Condit

IXSH35N120B Datasheet (82.37 KB)