* l Mounting torque (TO-247) 1.13/10 Nm/lb.in. 300 l Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Weight TO-247 TO-268 Epitaxial Silicon drift region - fast switching - small tail current MOS gate turn-on for drive simplicity 6 4 Applications Symbol Test Condit
IXSH35N120B Datasheet (82.37 KB)
IXSH35N120B
IXYS Corporation
82.37 KB
Igbt.
IGBT IXSH 35N120B IXST 35N120B "S" Series - Improved SCSOA Capability IC25 = 70 A VCES = 1200 V VCE(sat) = 3.6 V Symbol VCES VCGR VGES VGEM IC25 I.
📁 Related Datasheet
IXSH35N120A High Voltage High speed IGBT (IXYS)
IXSH35N140A High Voltage High speed IGBT (IXYS)
IXSH30N60 Low VCE(sat) IGBT (IXYS Corporation)
IXSH30N60A Low VCE(sat) IGBT (IXYS Corporation)
IXSH30N60B High Speed IGBT (IXYS Corporation)
IXSH30N60B2D1 High Speed IGBT with Diode (IXYS)
IXSH30N60BD1 High Speed IGBT (IXYS Corporation)
IXSH30N60C High Speed IGBT (IXYS Corporation)
IXSH30N60CD1 Short Circuit SOA Capability (IXYS Corporation)
IXSH10N60B2D1 High-Speed IGBT (IXYS)
