* q International standard package JEDEC TO-247 q High frequency IGBT with guaranteed Short Circuit SOA capability q Fast Fall Time for switching speeds up to 20 kHz q 2nd generation HDMOSTM process q Low V CE(sat) - for minimum on-state conduction losses q MOS Gate turn-on - drive simplicity Applicat
IXSH35N120A Datasheet (63.11 KB)
IXSH35N120A
IXYS
63.11 KB
High voltage high speed igbt.
High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N120A VCES IC25 VCE(sat) = 1200 V = 70 A = 4V Symbol Test Conditions VCES V CG.
📁 Related Datasheet
IXSH35N120B IGBT (IXYS Corporation)
IXSH35N140A High Voltage High speed IGBT (IXYS)
IXSH30N60 Low VCE(sat) IGBT (IXYS Corporation)
IXSH30N60A Low VCE(sat) IGBT (IXYS Corporation)
IXSH30N60B High Speed IGBT (IXYS Corporation)
IXSH30N60B2D1 High Speed IGBT with Diode (IXYS)
IXSH30N60BD1 High Speed IGBT (IXYS Corporation)
IXSH30N60C High Speed IGBT (IXYS Corporation)
IXSH30N60CD1 Short Circuit SOA Capability (IXYS Corporation)
IXSH10N60B2D1 High-Speed IGBT (IXYS)
