IXSH35N120A Datasheet (IXYS) - High Voltage High speed IGBT

IXSH35N120A, High Voltage High speed IGBT

High Voltage, High speed IGBT Short Circuit SOA Capability IXSH 35N120A VCES IC25 VCE(sat) = 1200 V = 70 A = 4V Symbol Test Conditions VCES V CGR VGES V GEM IC25 IC90 I CM SSOA (RBSOA) TJ = 25°C to 150°C T J = 25°C to 150°C; R GE = 1 MW Continuous Transient TC = 25°C TC = 90°C T C = 25°C, 1 ms VGE= 15 V, TJ = 125°C, RG = 22 W Clamped inductive load, L = 30 mH tSC (SCSOA) P C TJ TJM Tstg Md Weight VGE= 15 V, VCE = 0.6 VCES, TJ = 125°C RG = 22 W, non repetitive

IXSH35N120A Features

* q International standard package JEDEC TO-247 q High frequency IGBT with guaranteed Short Circuit SOA capability q Fast Fall Time for switching speeds up to 20 kHz q 2nd generation HDMOSTM process q Low V CE(sat) - for minimum on-state conduction losses q MOS Gate turn-on - drive simplicity Applicat