* International standard package JEDEC TO-247 AD
* Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g
* Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (
IXTH50P085 Datasheet (564.03 KB)
IXTH50P085
IXYS Corporation
564.03 KB
Standard power mosfet.
www.DataSheet4U.com Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 50P085 VDSS ID25 RDS(on) = -85 V = -50 A = 55 mΩ Symbo.
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