IXTH50P085 Datasheet (IXYS Corporation)

IXTH50P085, Standard Power MOSFET

www.DataSheet4U.com Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 50P085 VDSS ID25 RDS(on) = -85 V = -50 A = 55 mΩ Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum Ratings -85 -85 ± 20 ± 30 -50 -200 -50 30 300 -55 +150 150 -55 +150 V V V V A A A mJ W °C °C °C °C TO-247 A

IXTH50P085 Features

* International standard package JEDEC TO-247 AD

* Low RDS (on) HDMOSTM process 1.13/10 Nm/lb.in. 6 g

* Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance (