* z International standard packages JEDEC TO-247 AD z Low RDS(ON) HDMOSTM process z Rugged polysilicon gate cell structure z Unclamped Inductive Switching (UIS) rated z Low package inductance (< 5nH) - easy to drive and to protect Applications z High side switching z Push-pull amplifiers z DC Choppers
IXTH50P10 Datasheet (120.87 KB)
IXTH50P10
IXYS Corporation
120.87 KB
Standard power mosfet.
Standard Power MOSFET
P-Channel Enhancement Mode Avalanche Rated
IXTH50P10 IXTT50P10
VDSS =
ID25 = ≤ RDS(on)
- 100V - 50A
55mΩ
TO-247 (IXTH)
Symb.
📁 Related Datasheet
IXTH50P10 P-Channel MOSFET (INCHANGE)
IXTH50P085 P-Channel MOSFET (INCHANGE)
IXTH50P085 Standard Power MOSFET (IXYS Corporation)
IXTH50N20 MegaMOS FET (IXYS Corporation)
IXTH50N20 N-Channel MOSFET (INCHANGE)
IXTH50N25T Trench Gate Power MOSFET (IXYS)
IXTH50N30 N-Channel MOSFET (INCHANGE)
IXTH50N30 Power MOSFET (IXYS)
IXTH52N65X N-Channel MOSFET (INCHANGE)
IXTH52N65X Power MOSFET (IXYS)
