* Ultra-low On Resistance Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect 175 ° C Operating Temperature Symbol Test Conditions (TJ = 25° C unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 100 µA IGSS VGS = ± 20 V,
IXTP88N085T Datasheet (207.78 KB)
IXTP88N085T
IXYS Corporation
207.78 KB
Power mosfet.
Preliminary Technical Information
TrenchMVTM Power MOSFET
IXTA88N085T IXTP88N085T
N-Channel Enhancement Mode Avalanche Rated
VDSS = ID25 =
RDS(on).
📁 Related Datasheet
IXTP88N085T N-Channel MOSFET (INCHANGE)
IXTP80N075L2 N-Channel MOSFET (INCHANGE)
IXTP80N075L2 Power MOSFET (IXYS)
IXTP80N10T Power MOSFET (IXYS)
IXTP80N10T N-Channel MOSFET (INCHANGE)
IXTP80N12T2 Power MOSFET (IXYS)
IXTP80N12T2 N-Channel MOSFET (INCHANGE)
IXTP86N20T N-Channel MOSFET (INCHANGE)
IXTP86N20T Power MOSFET (IXYS)
IXTP8N50P PolarHV Power MOSFET (IXYS)
