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IXTQ96N15P Datasheet - IXYS Corporation

IXTQ96N15P, N-Channel MOSFET

PolarHTTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated IXTQ 96N15P IXTT 96N15P V DSS ID25 RDS(on) = 150 V = 96 A ≤ 24 mΩ Symbol VDSS VD.
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IXTQ96N15P_IXYSCorporation.pdf

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Datasheet Details

Part number:

IXTQ96N15P

Manufacturer:

IXYS Corporation

File Size:

212.13 KB

Description:

N-Channel MOSFET

Features

* l International standard packages l Unclamped Inductive Switching (UIS) rated l Low package inductance - easy to drive and to protect Symbol Test Conditions (TJ = 25° C, unless otherwise specified) BVDSS VGS = 0 V, ID = 250 µA Characteristic Values Min. Typ. Max. 150 V VGS(th) VDS = VGS, I

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