IXTT69N30P Datasheet (IXYS Corporation)

IXTT69N30P, Power MOSFET

PolarTM Power MOSFET IXTT69N30P IXTQ69N30P VDSS = 300V ID25 = 69A ≤ RDS(on) 49mΩ N-Channel Enhancement Mode Avalanche Rated TO-268 (IXTT) Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS dv/dt PD TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C IS < IDM, VDD < VDSS, TJ < 150°C TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s Mounting Torque (TO-3

IXTT69N30P Features

* z International Standard Packages z Fast Intrinsic Diode z Avalanche Rated z Low RDS(ON) and QG z Low Package Inductance Advantages z High Power Density z Easy to Mount z Space Savings Applications z DC-DC Coverters z Battery Chargers z Switch-Mode and Resonant-Mode Power Supplies z DC Choppers z AC