IXTT6N150 Power MOSFET

IXYS

Description

High Voltage Power MOSFET IXTT6N150 IXTH6N150 N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode Symbol VDSS VDGR VGSS VGSM ID25 IDM I.

📥 Download Datasheet

IXTT6N150 Datasheet Preview — Preview of IXTT6N150 PDF

Datasheet Specifications

Part number: IXTT6N150
Manufacturer: IXYS
File Size: 297.31 KB
Datasheet: IXTT6N150-IXYS.pdf
Description: Power MOSFET

Features

* International Standard Packages
* Molding Epoxies Weet UL 94 V-0 Flammability Classification
* Fast Intrinsic Diode
* Low Package Inductance Advantages
* Easy to Mount
* Space Savings

Applications

* High Voltage Power Supplies
* Capacitor Discharge
* Pulse Circuits ©2019 IXYS CORPORATION, All Rights Reserved DS100233C(03/19) Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) gfs VDS = 20V, ID = 0.5
* ID25, Note 1 Ciss Coss Crss VGS = 0V, VDS = 25V, f =

IXTT6N150 Distributors

📁 Related Datasheet

IXTT6N120 IXTT64N25P IXTT69N30P IXTT100N25P IXTT10P50 IXTT110N10P

📌 All Tags

IXTT6N150 Power MOSFET IXYS

IXYS IXTT6N150-like datasheet