IXTT88N30P, IXTH88N30P Datasheet - IXYS Corporation

IXTT88N30P Power MOSFET

www.DataSheet4U.com PolarHTTM Power MOSFET N-Channel Enhancement Mode Preliminary Data Sheet IXTH 88N30P IXTT 88N30P RDS(on) VDSS = 300 ID25 = 88 = 40 mΩ V A Symbol VDSS VDGR VGSM ID25 ID(RMS) IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Maximum Ratings 300 300 ± 20 V V V A A A A mJ J V/ns W °C °C °C °C TO-247 (IXTH) D (TAB) TC = 25°C External lead current limit TC = 25°C, pulse width limited by TJM TC = 25°C TC = 2.

IXTT88N30P Features

* z z 1.6 mm (0.062 in.) from case for 10 s Mounting torque TO-247 TO-264 TO-268 300 1.13/10 Nm/lb.in. 6 10 5 g g g z International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Advantages Symbol Test Conditions (TJ = 25°C, unle

IXTH88N30P_IXYSCorporation.pdf