IXTT8P50, IXTH8P50 Datasheet - IXYS

IXTT8P50 Power MOSFET

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 8P50 IXTT 8P50 VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR PD TJ TJM Tstg Md Weight Symbol VDSS VGS(th) IGSS IDSS RDS(on) TO-247 (IXTH) Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MΩ Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJ TC = 25°C TC = 25°C TC = 25°C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic.

IXTT8P50 Features

* International standard packages

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inductance (

IXTH8P50_IXYSCorporation.pdf

IXTT8P50 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTT8P50, IXTH8P50. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXTT8P50, IXTH8P50

Manufacturer:

IXYS

File Size:

563.73 KB

Description:

Power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXTT8P50, IXTH8P50.
Please refer to the document for exact specifications by model.

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IXTT8P50 IXTH8P50 Power MOSFET IXYS

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