IXTT8P50, IXTH8P50 Power MOSFET

IXYS

Description

Standard Power MOSFET P-Channel Enhancement Mode Avalanche Rated IXTH 8P50 IXTT 8P50 VDSS = -500 V ID25 = -8 A RDS(on) = 1.2 Ω Symbol VDSS VDGR VGS.

📥 Download Datasheet

IXTT8P50 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXTT8P50, IXTH8P50. Please refer to the document for exact specifications by model.

Datasheet Specifications

Part number: IXTT8P50, IXTH8P50
Manufacturer: IXYS
File Size: 563.73 KB
Datasheet: IXTH8P50_IXYSCorporation.pdf
Description: Power MOSFET
Note: This datasheet PDF includes multiple part numbers: IXTT8P50, IXTH8P50.
Please refer to the document for exact specifications by model.

Features

* International standard packages
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance (

Applications

* High side switching
* Push-pull amplifiers
* DC choppers
* Automatic test equipment Advantages
* Easy to mount with 1 screw (isolated mounting screw hole)
* Space savings
* High power density © 2005 IXYS All rights reserved DS94534F(02/05)

IXTT8P50 Distributors

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IXTH8P50 Power MOSFET IXYS

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