IXFJ13N50 Power MOSFET

IXYS

Description

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.4 £ 250.

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Datasheet Specifications

Part number: IXFJ13N50
Manufacturer: IXYS
File Size: 98.17 KB
Datasheet: IXFJ13N50_IXYS.pdf
Description: Power MOSFET

Features

* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220 designs
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package induct

Applications

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) 1.6 mm (0.062 in. ) from case for 10 s 300 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 0.4 V V nA mA mA W

IXFJ13N50 Distributors

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IXFJ13N50 Power MOSFET IXYS

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