Datasheet4U Logo Datasheet4U.com

IXFJ13N50 Datasheet - IXYS

IXFJ13N50 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family IXFJ 13N50 VDSS ID (cont) RDS(on) trr = 500 = 13 = 0.4 £ 250 V A W ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C Maximum Ratings 500 500 ±20 ±30 13 5.

IXFJ13N50 Features

* Low profile, high power package

* Long creep and strike distances

* Easy up-grade path for TO-220 designs

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package induct

IXFJ13N50 Datasheet (98.17 KB)

Preview of IXFJ13N50 PDF

Datasheet Details

Part number:

IXFJ13N50

Manufacturer:

IXYS

File Size:

98.17 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFJ20N85X Power MOSFET (IXYS)

IXFJ32N50Q Power MOSFET (IXYS)

IXFJ36N30 Power MOSFET (IXYS)

IXFJ40N30 Power MOSFET (IXYS)

IXF18102 10Gbps Physical Layer Device (Intel Corporation)

IXF18104 10 Gigabit Lan PHY (Intel Corporation)

IXFA102N15T Power MOSFET (IXYS Corporation)

IXFA102N15T N-Channel MOSFET (INCHANGE)

IXFA10N60P Polar MOSFET (IXYS Corporation)

IXFA10N80P Power MOSFET (IXYS Corporation)

TAGS

IXFJ13N50 Power MOSFET IXYS

Image Gallery

IXFJ13N50 Datasheet Preview Page 2 IXFJ13N50 Datasheet Preview Page 3

IXFJ13N50 Distributor