* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220 designs
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package induct
IXFJ13N50 Datasheet (98.17 KB)
IXFJ13N50
IXYS
98.17 KB
Power mosfet.
HiPerFETTM Power MOSFETs
N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family
IXFJ 13N50 VDSS
ID (cont) RDS(on) trr
= 500 = 13 = 0.4 £ 250.
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