HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFJ 32N50Q VDSS ID
Datasheet Details
Part number:
IXFJ32N50Q
Manufacturer:
IXYS
File Size:
119.97 KB
Description:
Power mosfet.