IXFJ32N50Q Power MOSFET

IXYS

Description

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDG.

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Datasheet Specifications

Part number: IXFJ32N50Q
Manufacturer: IXYS
File Size: 119.97 KB
Datasheet: IXFJ32N50Q_IXYS.pdf
Description: Power MOSFET

Features

* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220 designs
* Low RDS (on) low Qg process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inducta

Applications

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 100 1 0.15 V V nA mA mA W

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IXFJ32N50Q Power MOSFET IXYS

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