IXFJ32N50Q Datasheet - IXYS

IXFJ32N50Q, Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDG.

datasheet Preview Page 1 from Datasheet4u.com

IXFJ32N50Q_IXYS.pdf

IXFJ32N50Q Datasheet Preview — Preview of IXFJ32N50Q PDF

Datasheet Details

Part number:

IXFJ32N50Q

Manufacturer:

IXYS

File Size:

119.97 KB

Description:

Power MOSFET

Features

* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220 designs
* Low RDS (on) low Qg process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inducta

Applications

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB) Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 500 2 4 ±100 TJ = 25°C TJ = 125°C 100 1 0.15 V V nA mA mA W

IXFJ32N50Q Distributors

📁 Related Datasheet

IXF18102 IXF18104 IXFA102N15T IXFA10N60P IXFA10N80P IXFA110N15T2

📌 All Tags

IXFJ32N50Q Power MOSFET IXYS

IXYS IXFJ32N50Q-like datasheet