IXFJ32N50Q Datasheet - IXYS

IXFJ32N50Q Power MOSFET

HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAs EAR dv/dt PD TJ TJM Tstg TL 1.6 mm (0.062 in.) from case for 10 s Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, TJ £ 150°C, RG = 2 W TC = 25°C IXFJ 32N50Q VDSS ID.

IXFJ32N50Q Features

* Low profile, high power package

* Long creep and strike distances

* Easy up-grade path for TO-220 designs

* Low RDS (on) low Qg process

* Rugged polysilicon gate cell structure

* Unclamped Inductive Switching (UIS) rated

* Low package inducta

IXFJ32N50Q_IXYS.pdf

IXFJ32N50Q Datasheet Preview — Preview of IXFJ32N50Q PDF

Datasheet Details

Part number:

IXFJ32N50Q

Manufacturer:

IXYS

File Size:

119.97 KB

Description:

Power mosfet.

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