IXFJ40N30 Datasheet - IXYS

IXFJ40N30 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) = V 40 A 80 mW trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings.

IXFJ40N30 Features

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB)

* Low profile, high power package

* Long creep and strike distances

* Easy up-grade path for TO-220

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inducti

IXFJ40N30 Datasheet (64.22 KB)

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Datasheet Details

Part number:

IXFJ40N30

Manufacturer:

IXYS

File Size:

64.22 KB

Description:

Power mosfet.

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IXFJ40N30 Power MOSFET IXYS

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