Datasheet Details
- Part number
- IXFJ40N30
- Manufacturer
- IXYS
- File Size
- 64.22 KB
- Datasheet
- IXFJ40N30_IXYS.pdf
- Description
- Power MOSFET
IXFJ40N30 Description
HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) =.
IXFJ40N30 Features
* G = Gate, S = Source, D = Drain, TAB = Drain G D S
é
(TAB)
* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inducti
IXFJ40N30 Applications
* - easy to drive and to protect rated designs
1.6 mm (0.062 in. ) from case for 10 s
300 5
Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 V V nA mA mA
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