IXFJ40N30 Datasheet - IXYS

IXFJ40N30 Power MOSFET

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) = V 40 A 80 mW trr < 200 ns Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM Tstg TL Weight Test Conditions T J = 25°C to 150°C T J = 25°C to 150°C; RGS = 1 MW Continuous Transient TC = 25°C TC = 25°C, pulse width limited by TJM TC = 25°C TC = 25°C IS £ IDM, di/dt £ 100 A/ms, VDD £ VDSS, T J £ 150°C, RG = 2 W TC = 25°C Maximum Ratings.

IXFJ40N30 Features

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB)

* Low profile, high power package

* Long creep and strike distances

* Easy up-grade path for TO-220

* Low RDS (on) HDMOSTM process

* Rugged polysilicon gate cell structure

* Unclamped Inducti

IXFJ40N30_IXYS.pdf

IXFJ40N30 Datasheet Preview — Preview of IXFJ40N30 PDF

Datasheet Details

Part number:

IXFJ40N30

Manufacturer:

IXYS

File Size:

64.22 KB

Description:

Power mosfet.

📁 Related Datasheet

IXFJ13N50 Power MOSFET (IXYS)

IXFJ20N85X Power MOSFET (IXYS)

IXFJ32N50Q Power MOSFET (IXYS)

IXFJ36N30 Power MOSFET (IXYS)

IXF18102 10Gbps Physical Layer Device (Intel Corporation)

IXF18104 10 Gigabit Lan PHY (Intel Corporation)

IXFA102N15T Power MOSFET (IXYS Corporation)

IXFA102N15T N-Channel MOSFET (INCHANGE)

TAGS

IXFJ40N30 IXFJ40N30 Power MOSFET IXYS

IXFJ40N30 Distributor