IXFJ40N30 Power MOSFET

IXYS

Description

HiPerFETTM Power MOSFETs N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family Preliminary data sheet IXFJ 40N30 VDSS = 300 ID25 = RDS(on) =.

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Datasheet Specifications

Part number: IXFJ40N30
Manufacturer: IXYS
File Size: 64.22 KB
Datasheet: IXFJ40N30_IXYS.pdf
Description: Power MOSFET

Features

* G = Gate, S = Source, D = Drain, TAB = Drain G D S é (TAB)
* Low profile, high power package
* Long creep and strike distances
* Easy up-grade path for TO-220
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inducti

Applications

* - easy to drive and to protect rated designs 1.6 mm (0.062 in. ) from case for 10 s 300 5 Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 300 2 4 ±100 TJ = 25°C TJ = 125°C 200 1 V V nA mA mA

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Power MOSFET IXYS

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