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IXFK140N25T, IXFX140N25T GigaMOS Power MOSFET

IXFK140N25T Description

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK140N25.

IXFK140N25T Features

* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS =

IXFK140N25T Applications

* z z z 50 µA 3 mA 17 mΩ z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All Rights Reserved DS100135(03/09) www. DataSheet4U. com IX

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This datasheet PDF includes multiple part numbers: IXFK140N25T, IXFX140N25T. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IXFK140N25T, IXFX140N25T
Manufacturer
IXYS
File Size
162.34 KB
Datasheet
IXFX140N25T_IXYS.pdf
Description
GigaMOS Power MOSFET
Note
This datasheet PDF includes multiple part numbers: IXFK140N25T, IXFX140N25T.
Please refer to the document for exact specifications by model.

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GigaMOS Power MOSFET IXYS
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