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IXFK230N20T, IXFX230N20T Datasheet - IXYS

IXFK230N20T GigaMOS Power MOSFET

Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK230N20T IXFX230N20T RDS(on) ≤ ≤ trr TO-264 (IXFK) VDSS ID25 = = 200V 230A 7.5mΩ 200ns Symbol VDSS VDGR VGSS VGSM ID25 IL(RMS) IDM IA EAS dV/dt PD TJ TJM Tstg TL TSOLD Md FC Weight Test Conditions TJ = 25°C to 175°C TJ = 25°C to 175°C, RGS = 1MΩ Continuous Transient TC = 25°C External Lead Current Limit TC = 25°C, Pulse Width Limited by TJM TC = 25°.

IXFK230N20T Features

* z z z z z 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torque (TO-264) Mounting Force TO-264 PLUS247 (PLUS247) 300 260 1.13/10 20..120 /4.5..27 10 6 International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z

IXFX230N20T_IXYS.pdf

This datasheet PDF includes multiple part numbers: IXFK230N20T, IXFX230N20T. Please refer to the document for exact specifications by model.
IXFK230N20T Datasheet Preview Page 2 IXFK230N20T Datasheet Preview Page 3

Datasheet Details

Part number:

IXFK230N20T, IXFX230N20T

Manufacturer:

IXYS

File Size:

162.98 KB

Description:

Gigamos power mosfet.

Note:

This datasheet PDF includes multiple part numbers: IXFK230N20T, IXFX230N20T.
Please refer to the document for exact specifications by model.

IXFK230N20T Distributor

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TAGS

IXFK230N20T IXFX230N20T GigaMOS Power MOSFET IXYS