* International standard package
* miniBLOC, with Aluminium nitride isolation
* Low RDS (on) HDMOSTM process
* Rugged polysilicon gate cell structure
* Unclamped Inductive Switching (UIS) rated
* Low package inductance
* Fast intrinsic Rectifie
IXFN90N30 Datasheet (317.16 KB)
IXFN90N30
IXYS
317.16 KB
Power mosfet.
HiPerFETTM Power MOSFETs Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Symbol V DSS V DGR VGS VG.
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