* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 4mA VGS = ± 20V, VDS = 0V VDS =
IXFX140N25T Datasheet (162.34 KB)
IXFX140N25T
IXYS
162.34 KB
Gigamos power mosfet.
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK140N25.
📁 Related Datasheet
IXFX140N25T GigaMOS Power MOSFET (IXYS)
IXFX140N30P Power MOSFET (IXYS)
IXFX14N100 HiPerFET Power MOSFETs (IXYS)
IXFX100N25 Power MOSFET (IXYS Corporation)
IXFX100N65X2 Power MOSFET (IXYS)
IXFX120N20 Power MOSFET (IXYS)
IXFX120N25 HiPerFET Power MOSFETs (IXYS)
IXFX120N25P PolarHT HiPerFET Power MOSFET (IXYS)
IXFX120N30T GigaMOS Power MOSFET (IXYS)
IXFX120N30T GigaMOS Power MOSFET (IXYS)
