Datasheet Specifications
- Part number
- IXFX160N30T
- Manufacturer
- IXYS
- File Size
- 161.99 KB
- Datasheet
- IXFX160N30T_IXYS.pdf
- Description
- GigaMOS Power MOSFET
Description
Advance Technical Information www.DataSheet4U.com GigaMOSTM Power MOSFET N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode IXFK160N30.
Features
* z z z z z International Standard Packages High Current Handling Capability Fast Intrinsic Diode Avalanche Rated Low RDS(on) Advantages z Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0V, ID = 3mA VDS = VGS, ID = 8mA VGS = ± 20V, VDS = 0V VDS =Applications
* z z z 50 µA 3 mA 19 mΩ z z z z DC-DC Converters Battery Chargers Switched-Mode and Resonant-Mode Power Supplies DC Choppers AC Motor Drives Uninterruptible Power Supplies High Speed Power Switching Applications © 2009 IXYS CORPORATION, All rights reserved DS100127(03/09) www. DataSheet4U. com IIXFX160N30T Distributors
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