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IXGH35N120B Datasheet - IXYS

IGBT

IXGH35N120B Features

* International standard packages JEDEC TO-268 and JEDEC TO-247 AD

* Low switching losses, low V (sat)

* MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V,

IXGH35N120B Datasheet (52.45 KB)

Preview of IXGH35N120B PDF

Datasheet Details

Part number:

IXGH35N120B

Manufacturer:

IXYS

File Size:

52.45 KB

Description:

Igbt.
Advance Technical Information HiPerFASTTM IGBT IXGH 35N120B IXGT 35N120B VCES = IC2 = VCE(sat) = =tfi(typ) 1200 V 70 A 3.3 V 160 ns Symbol Test .

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IXGH35N120B IGBT IXYS

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