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IXGH35N120B - IGBT

IXYS

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Datasheet Details

Part number	IXGH35N120B
Manufacturer	IXYS
File Size	52.45 KB
Description	IGBT
Datasheet	IXGH35N120B-IXYS.pdf

IXGH35N120B Product details

Features

International standard packages JEDEC TO-268 and JEDEC TO-247 AD.
Low switching losses, low V (sat).
MOS Gate turn-on - drive simplicity Symbol BVCES VGE(th) I CES IGES VCE(sat) Test Conditions IC = 1 mA, VGE = 0 V IC = 750 mA, VCE = VGE V =V CE CES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = IC90, VGE = 15 V Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. T= J 25°C TJ = 125°C TJ = 125°C 1200 2.5 V 5V 250 mA 5 mA ±100 nA 3.3 V 2.7 V.

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Published: Oct 27, 2015 |