* z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2008 IXYS
IXGH30N120B3D1 Datasheet (209.87 KB)
IXGH30N120B3D1
IXYS Corporation
209.87 KB
Genx3 1200v igbts.
GenX3TM 1200V IGBT
High speed Low Vsat PT IGBTs 3-20 kHz switching
IXGH30N120B3D1 IXGT30N120B3D1
VCES IC110 VCE(sat) tfi(typ)
= 1200V = 30A ≤£ 3.5V.
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Symbol VCES VCGR
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V.
