IXGH30N120C3H1 Datasheet - IXYS Corporation

IXGH30N120C3H1 - High speed PT IGBTs

Preliminary Technical Information GenX3TM 1200V IGBT IXGH30N120C3H1 High speed PT IGBTs for 10-50kHz Switching VCES IC100 VCE(sat) tfi(typ) = 1200V = 24A ≤ 4.2V = 42ns Symbol VCES VCGR VGES VGEM IC25 IC100 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 100°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C Mounting Torque Maximum Le.

IXGH30N120C3H1 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z Avalanche Rated z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z AC Motor Speed Control z DC Servo and Robot Drives z DC Choppers z Uninte

IXGH30N120C3H1-IXYSCorporation.pdf

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Datasheet Details

Part number:

IXGH30N120C3H1

Manufacturer:

IXYS Corporation

File Size:

177.14 KB

Description:

High speed pt igbts.

IXGH30N120C3H1 Distributor

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IXGH30N120C3H1 High speed IGBTs IXYS Corporation