* International standard package JEDEC TO-247 AD
* High current handling capability
* Newest generation HDMOSTM Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) proces
IXGH30N30 Datasheet (108.70 KB)
IXGH30N30
IXYS Corporation
108.70 KB
Hiperfast igbt.
HiPerFASTTM IGBT
IXGH30N30
VCES IC25 VCE(sat) tfi
= = = =
300 V 60 A 1.6 V 180 ns
Preliminary data
www.DataSheet4U.com
Symbol VCES VCGR VGES VG.
📁 Related Datasheet
IXGH30N120B3 - GenX3 1200V IGBTs
(IXYS Corporation)
GenX3TM 1200V IGBTs
High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
VCES IC110 VCE(sat) tfi(typ)
TO-263 (IXGA.
IXGH30N120B3D1 - GenX3 1200V IGBTs
(IXYS Corporation)
GenX3TM 1200V IGBT
High speed Low Vsat PT IGBTs 3-20 kHz switching
IXGH30N120B3D1 IXGT30N120B3D1
VCES IC110 VCE(sat) tfi(typ)
= 1200V = 30A ≤£ 3.5V.
IXGH30N120C3H1 - High speed PT IGBTs
(IXYS Corporation)
Preliminary Technical Information
GenX3TM 1200V IGBT IXGH30N120C3H1
High speed PT IGBTs for 10-50kHz Switching
VCES IC100 VCE(sat) tfi(typ)
= 1200V.
IXGH30N60 - Low VCE(sat) IGBT
(IXYS Corporation)
VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
.. Symbo.
IXGH30N60A - Low VCE(sat) IGBT
(IXYS Corporation)
VCES Low VCE(sat) IGBT High speed IGBT IXGH/IXGM 30 N60 IXGH/IXGM 30 N60A 600 V 600 V
IC25 50 A 50 A
VCE(sat) 2.5 V 3.0 V
.. Symbo.
IXGH30N60B - HiPerFASTTM IGBT
(IXYS Corporation)
HiPerFASTTM IGBT
IXGH30N60B IXGT30N60B
VCES IC25 VCE(sat) tfi
= 600 V = 60 A = 1.8 V = 100 ns
..
Symbol VCES VCGR
Test Conditio.
IXGH30N60B2 - HiPerFAST IGBT
(IXYS Corporation)
..
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B.
IXGH30N60B2D1 - IGBT
(IXYS)
Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B2D1 IXGT 30N60B2D1
V.
