IXGH36N60B3C1 Datasheet - IXYS

IXGH36N60B3C1 GenX3 600V IGBT

Preliminary Technical Information www.DataSheet4U.com GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switching IXGH36N60B3C1 VCES IC110 VCE(sat) tfi(typ) TO-247 = = ≤ = 600V 36A 1.8V 100ns Symbol VCES VCGR VGES VGEM IC25 IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C (Limited by Leads) TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ.

IXGH36N60B3C1 Features

* z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package Advantages z z 1.6mm (0.062 in.) from Case for 10 seconds Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10 6 High Power Density Low Gate Drive Requireme

IXGH36N60B3C1_IXYS.pdf