* z z z z Optimized for Low Conduction and Switching Losses Square RBSOA Anti-Parallel Schottky Diode International Standard Package Advantages z z 1.6mm (0.062 in.) from Case for 10 seconds Plastic Body for 10 seconds Mounting Torque 300 260 1.13/10 6 High Power Density Low Gate Drive Requireme
IXGH36N60B3C1 Datasheet (204.43 KB)
IXGH36N60B3C1
IXYS
204.43 KB
Genx3 600v igbt.
Preliminary Technical Information
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GenX3TM 600V IGBT w/ SiC Anti-Parallel Diode
Medium Speed Low Vsat PT IGBT for 5 - 40kHz Switc.
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Advance Technical Information
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IXGH36N60B3
Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching
VCES =
IC110
=
VCE(sat) ≤
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IXGH36N60B3D1 - Medium-Speed Low-Vsat PT IGBT
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GenX3TM 600V IGBT w/ Diode
IXGH36N60B3D1
Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching
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IC110
=
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TO-247
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GenX3TM 600V IGBT
Ultra Low Vsat PT IGBT for up to 5kHz Switching
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Symbol
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VGES VGEM
IICC21510 ICM
SSOA .
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HiPerFASTTM IGBT with Diode
IXGH 30N60BD1 VCES IXGT 30N60BD1 I C25
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Symbol VCES VCGR VGES VGEM IC.
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High-Speed Low-Vsat PT IGBTs 3-20 kHz Switching
IXGA30N120B3 IXGP30N120B3 IXGH30N120B3
VCES IC110 VCE(sat) tfi(typ)
TO-263 (IXGA.
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High speed Low Vsat PT IGBTs 3-20 kHz switching
IXGH30N120B3D1 IXGT30N120B3D1
VCES IC110 VCE(sat) tfi(typ)
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Preliminary Technical Information
GenX3TM 1200V IGBT IXGH30N120C3H1
High speed PT IGBTs for 10-50kHz Switching
VCES IC100 VCE(sat) tfi(typ)
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IXGH30N30 - HiPerFAST IGBT
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HiPerFASTTM IGBT
IXGH30N30
VCES IC25 VCE(sat) tfi
= = = =
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Preliminary data
..
Symbol VCES VCGR VGES VG.
