IXGH36N60B3D1 Datasheet - IXYS

IXGH36N60B3D1 Medium-Speed Low-Vsat PT IGBT

GenX3TM 600V IGBT w/ Diode IXGH36N60B3D1 Medium-Speed Low-Vsat PT IGBT for 5 - 40kHz Switching VCES = IC110 = VCE(sat) ≤ 600V 36A 1.8V TO-247 Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE= 15V, TVJ = 125°C, RG = 5Ω Clamped Inductive Load TC = 25°C 1.6mm (0.062 in.) from Case for 10s Plastic Body for 10s Mounting Torqu.

IXGH36N60B3D1 Features

* z Optimized for Low Conduction and Switching Losses z Square RBSOA z Anti-Parallel Ultra Fast Diode z International Standard Package Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Mac

IXGH36N60B3D1-IXYS.pdf