IXGT30N60B2D1, IXGH30N60B2D1 Datasheet - IXYS

IXGT30N60B2D1 IGBT

Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B2D1 IXGT 30N60B2D1 VCES IC25 VCE(sat) tfi typ = 600 V = 70 A < 1.8 V = 82 ns Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ VGES VGEM Continuous Transient IC25 TC = 25°C (limited by leads) IC110 TC = 110°C ICM TC = 25°C, 1 ms SSOA (RBSOA) PC VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C .

IXGT30N60B2D1 Features

* z Medium frequency IGBT z Square RBSOA z High current handling capability z MOS Gate turn-on - drive simplicity Applications z PFC circuits z Uninterruptible power supplies (UPS) z Switched-mode and resonant-mode power supplies z AC motor speed control z DC servo and robot drives z DC choppers © 20

IXGH30N60B2D1-IXYS.pdf