IXGT30N120B3D1, IXGH30N120B3D1 Datasheet - IXYS Corporation

IXGT30N120B3D1 GenX3 1200V IGBTs

GenX3TM 1200V IGBT High speed Low Vsat PT IGBTs 3-20 kHz switching IXGH30N120B3D1 IXGT30N120B3D1 VCES IC110 VCE(sat) tfi(typ) = 1200V = 30A ≤£ 3.5V = 204ns Symbol VCES VCGR VGES VGEM IC110 IF110 ICM SSOA (RBSOA) PC TJ TJM Tstg Md TL TSOLD Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 110°C TC = 110°C TC = 25°C, 1ms VGE = 15V, TVJ = 125°C, RG = 5Ω Clamped inductive load TC = 25°C Mounting torque (TO-247) Maximum lead temperature for solderi.

IXGT30N120B3D1 Features

* z Optimized for low conduction and switching losses z Square RBSOA z Anti-parallel ultra fast diode z International standard packages Advantages z High power density z Low gate drive requirement Applications z Power Inverters z UPS z Motor Drives z SMPS z PFC Circuits z Welding Machines © 2008 IXYS

IXGH30N120B3D1-IXYSCorporation.pdf

IXGT30N120B3D1 Datasheet Preview — This datasheet PDF includes multiple part numbers: IXGT30N120B3D1, IXGH30N120B3D1. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

IXGT30N120B3D1, IXGH30N120B3D1

Manufacturer:

IXYS Corporation

File Size:

209.87 KB

Description:

Genx3 1200v igbts.

Note:

This datasheet PDF includes multiple part numbers: IXGT30N120B3D1, IXGH30N120B3D1.
Please refer to the document for exact specifications by model.

📁 Related Datasheet

IXGT30N60B HiPerFASTTM IGBT (IXYS Corporation)

IXGT30N60B2 HiPerFAST IGBT (IXYS Corporation)

IXGT30N60B2D1 IGBT (IXYS)

IXGT30N60BD1 HiPerFASTTM IGBT with Diode (IXYS Corporation)

IXGT30N60BU1 HiPerFAST IGBT (IXYS Corporation)

IXGT30N60C2 HiPerFAST IGBT (IXYS)

IXGT30N60C2D1 HiPerFAST IGBT (IXYS)

IXGT31N60 Ultra-Low VCE(sat) IGBT (IXYS Corporation)

TAGS

IXGT30N120B3D1 IXGH30N120B3D1 GenX3 1200V IGBTs IXYS Corporation

IXGT30N120B3D1 Distributor