IXGT32N120A3, IXGH32N120A3 Datasheet - IXYS

IXGT32N120A3 Ultra-Low Vsat PT IGBT

GenX3TM 1200V IGBTs Ultra-Low Vsat PT IGBTs for up to 3 kHz Switching IXGH32N120A3 IXGT32N120A3 VCES = IC110 = VCE(sat) ≤ 1200V 32A 2.35V Symbol VCES VCGR VGES VGEM IC25 IC110 ICM IA EAS SSOA (RBSOA) PC TJ TJM Tstg TL TSOLD Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ Continuous Transient TC = 25°C TC = 110°C TC = 25°C, 1ms TC = 25°C TC = 25°C VGE= 15V, TJ = 125°C, RG = 20Ω Clamped Inductive Load TC = 25°C 1.6mm (0.063in) from Case for 10s Plastic Body for 10s .

IXGT32N120A3 Features

* z Optimized for Low Conduction Losses z International Standard Packages Advantages z High Power Density z Low Gate Drive Requirement Applications z Power Inverters z Capacitor Discharge z UPS z Motor Drives z SMPS z PFC Circuits z Battery Chargers z Welding Machines z Lamp Ballasts z Inrush Current

IXGH32N120A3-IXYS.pdf