* z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD 1.13/10 Nm/lb.in. 6 4 g g z z z Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity Appl
IXGT30N60B2 Datasheet (605.82 KB)
IXGT30N60B2
IXYS Corporation
605.82 KB
Hiperfast igbt.
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Advance Technical Data
HiPerFASTTM IGBT
Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching
IXGH 30N60B.
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