Description
www.DataSheet4U.com Advance Technical Data HiPerFASTTM IGBT Optimized for 10-25 KHz hard switching and up to 150 KHz resonant switching IXGH 30N60B.
Features
* z
G = Gate, E = Emitter,
Maximum lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Md Weight Mounting torque (M3) TO-247 AD TO-268 SMD
1.13/10 Nm/lb. in. 6 4 g g
z z z
Medium frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - drive simplicity
Appl
Applications
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Symbol
Test Conditions
Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 2.5 TJ = 25°C TJ = 150°C 5.0 50 1 ±100 TJ = 25°C 1.8 V µA mA nA V
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z z z
VGE(th) ICES IGES VCE(sat)
IC
= 250 µA, VCE = VGE VCE = VCES VGE = 0 V VCE = 0 V, VGE = ±20 V IC = 24 A, VGE = 15