Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL < 600V PC TC = 25°C TJ TJM Tstg Maximum lead
Datasheet Details
Part number:
IXGT32N90B2D1, IXGH32N90B2D1
Manufacturer:
IXYS
File Size:
215.24 KB
Description:
Igbt.
Note:
This datasheet PDF includes multiple part numbers: IXGT32N90B2D1, IXGH32N90B2D1.
Please refer to the document for exact specifications by model.