IXGT32N90B2D1, IXGH32N90B2D1 Datasheet - IXYS

IXGT32N90B2D1 - IGBT

Advance Technical Information HiPerFASTTM IGBT with Fast Diode B2-Class High Speed IGBTs with Ultrafast Diode IXGH 32N90B2D1 IXGT 32N90B2D1 V I CES VC25 t CE(sat) fi typ = 900 V = 64 A = 2.7 V = 150 ns Symbol Test Conditions VCES VCGR VGES VGEM TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MW Continuous Transient IC25 IC110 ICM SSOA (RBSOA) TC = 25°C TC = 110°C TC = 25°C, 1 ms VGE= 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load: VCL < 600V PC TC = 25°C TJ TJM Tstg Maximum lead

IXGT32N90B2D1 Features

* High frequency IGBT

* High current handling capability

* MOS Gate turn-on - drive simplicity Applications

* PFC circuits

* Uninterruptible power supplies (UPS)

* Switched-mode and resonant-mode power supplies

* AC motor speed control

IXGH32N90B2D1-IXYS.pdf