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IXGT32N170 Datasheet - IXYS

IXGT32N170 - High Voltage IGBT

www.DataSheet4U.com High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 250 ns Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 5 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ± 20 ± 30 75 32 200 ICM = 90 @ 0.8 VCES 350 -55 +150 150 -55

IXGT32N170 Features

* z Maximum Lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb.in. TO-247 AD TO-268 6 4 g g z z International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current hand

IXGT32N170_IXYS.pdf

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Datasheet Details

Part number:

IXGT32N170

Manufacturer:

IXYS

File Size:

599.85 KB

Description:

High voltage igbt.

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IXGT32N170 High Voltage IGBT IXYS