IXGT32N170 Datasheet - IXYS

IXGT32N170, High Voltage IGBT

www.DataSheet4U.com High Voltage IGBT Preliminary Data Sheet IXGH 32N170 VCES IXGT 32N170 IC25 VCE(sat) tfi(typ) = 1700 V = 75 A = 3.3 V = 250 ns .

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IXGT32N170_IXYS.pdf

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Datasheet Details

Part number:

IXGT32N170

Manufacturer:

IXYS

File Size:

599.85 KB

Description:

High Voltage IGBT

Features

* z Maximum Lead temperature for soldering 1.6 mm (0.062 in. ) from case for 10 s Maximum Tab temperature for soldering SMD devices for 10 s Md Weight Mounting torque (M3) 1.13/10Nm/lb. in. TO-247 AD TO-268 6 4 g g z z International standard packages JEDEC TO-268 and JEDEC TO-247 AD High current hand

Applications

* z Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 1700 3.0 TJ = 25°C TJ = 125°C 5.0 50 1 ± 100 TJ = 25°C TJ = 125°C 2.5 3.0 3.3 V V µA mA nA V V z z z z BVCES VGE(th) ICES IGES VCE(sat) IC IC = 250 µA, VGE = 0 V = 250 µA, VCE = VGE z Capac

IXGT32N170 Distributors

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IXGT32N170 High Voltage IGBT IXYS

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