IXGT30N60C2, IXGH30N60C2 Datasheet - IXYS

IXGT30N60C2 HiPerFAST IGBT

HiPerFAST TM IGBT IXGH 30N60C2 IXGT 30N60C2 C2-Class High Speed IGBTs VCES IC25 VCE(sat) tfi typ www.DataSheet4U.com = 600 V = 70 A = 2.7 V = 32 ns Symbol VCES VCGR VGES VGEM IC25 IC110 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C (limited by leads) TC = 110°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 10 Ω Clamped inductive load @ ≤ 600 V TC = 25°C Maximum Ratings 600 600 ±20 ±30 70 30 150 ICM = 60 .

IXGT30N60C2 Features

* z z z z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10Nm/lb.in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - dr

IXGH30N60C2_IXYS.pdf