* z z z z G = Gate, E = Emitter, Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10s Md Weight Mounting torque (M3) (TO-247) TO-247 TO-268 1.13/10Nm/lb.in. 6 4 Very high frequency IGBT Square RBSOA High current handling capability MOS Gate turn-on - dr
IXGT30N60C2 Datasheet (603.12 KB)
IXGT30N60C2
IXYS
603.12 KB
Hiperfast igbt.
HiPerFAST
TM
IGBT
IXGH 30N60C2 IXGT 30N60C2
C2-Class High Speed IGBTs
VCES IC25 VCE(sat) tfi typ
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= 600 V = 70 A = 2.7 V = 3.
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